TMR element having a tunnel barrier which includes...

Details TMR element having a tunnel barrier which includes... TMR element having a tunnel barrier which includes...

2006-08-08

2010-02-09

Heinz, A. J. (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C365S158000, C365S171000

Reexamination Certificate

active

07660082

ABSTRACT:
A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.

REFERENCES:
patent: 5585196 (1996-12-01), Inomata et al.
patent: 7443639 (2008-10-01), Parkin
K. Tsunekawa, et al., “CoFeB/MgO/CoFeB/Magnetic Tunnel Junctions with High TMR and Low Junction Resistance”, Proceedings of INTERMAG 2005, Apr. 4, 2005.
http://www.jpo.go.jp/shiryou/index.htm, “Other information> standard technology> electricity> 2004 fiscal year> MRAM and spin memory technology (sections 1-2-2-3 to 1-2-2-6)” updated Mar. 25, 2005 by Japan Patent Office.

Affiliated with

Also associated with

Rating

TMR element having a tunnel barrier which includes... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with TMR element having a tunnel barrier which includes..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TMR element having a tunnel barrier which includes... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4217535