TMR device with novel free layer structure

Details TMR device with novel free layer structure TMR device with novel free layer structure

2009-01-14

2011-11-15

Mai, Son (Department: 2827)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324110, C360S324120, C257S421000, C257SE27006

Reexamination Certificate

active

08059374

ABSTRACT:
A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.

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