TMR device with Hf based seed layer

Details TMR device with Hf based seed layer TMR device with Hf based seed layer

2009-01-12

2010-11-09

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257SE27006, C257SE29323, C385S105000, C438S003000, C360S324110

Reexamination Certificate

active

07829963

ABSTRACT:
A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.

REFERENCES:
patent: 7063904 (2006-06-01), Ikarashi et al.
patent: 7077936 (2006-07-01), Saito et al.
patent: 7092222 (2006-08-01), Hasegawa et al.
patent: 7123453 (2006-10-01), Hasegawa et al.
patent: 7476954 (2009-01-01), Wang et al.
patent: 2005/0260772 (2005-11-01), Horng et al.
Periodic table, “Methods for displaying the periodic table,” found Jan. 23, 2007, http://en.wikipedia.org/wiki/Periodic—table, pp. 1-6.

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