Coherent light generators – Particular active media – Semiconductor
Patent
1993-11-02
1995-01-17
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 310, H01S 318
Patent
active
053832116
ABSTRACT:
A semiconductor laser source using a strained active layer of InGaAsN, introduced by the addition of N in the alloy, to obtain semiconductor laser sources that emit TM-polarized light in the wavelength range above 850 nm. The presence of N in the alloy reduces the lattice constant and produces the desired strain effect, i.e., biaxial tension which raises the light hole band (yielding TM polarization) and produces a narrowing of the band gap. Adding In can reduce the strain in the alloy while maintaining the desired band gap and light-hole/heavy-hole ordering.
REFERENCES:
patent: 4804639 (1989-02-01), Yablonovitch
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5117469 (1992-05-01), Cheung et al.
patent: 5216684 (1993-06-01), Wang et al.
"Bani lineups and deformation potentials in the model-solid theory", Chris G. Van de Walle, Physical Review B, .COPYRGT.1989 The American Physical Society, vol. 39, No. 3, 15 Jan. 1989-II.
"A Comparison of the Wurtzite and Zincblende Band Structures for SiC, AIN and GaN", W. R. L. Lambrecht and B. Segall, Mat. Res. Soc. Symp. Proc. vol. 242, 1992 Materials Research Society, no month available.
Bour David P.
Van de Walle Chris
Bovernick Rodney B.
McNutt Robert
Xerox Corporation
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