TiW platinum interconnect and method of making the same

Details TiW platinum interconnect and method of making the same TiW platinum interconnect and method of making the same

2005-10-18

2005-10-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S472000, C257S455000, C257S473000, C257S474000

Reexamination Certificate

active

06956274

ABSTRACT:
A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.

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