Fishing – trapping – and vermin destroying
Patent
1988-12-28
1991-05-14
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
H01L 2980
Patent
active
050156039
ABSTRACT:
A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to P InP material leads to unique processing and improved InP semiconductor devices.
REFERENCES:
patent: 4359485 (1982-11-01), Donnelly et al.
patent: 4366186 (1982-12-01), Keramidas et al.
patent: 4471005 (1984-09-01), Cheng et al.
Yamashita et al., J. Appl. Phys. 52 (12), Dec. 1961 pp. 7304-7306.
J. B. Boos et al. "Fully Ion Implanted InP Junction FET's", IEEE Electron vice Letters, vol. EDL-3, No. 9, Sep. 1982, pp. 256-258.
Tatsuyuki Sanaga et al. "Ohmic Contacts to p-GaAs with Au/Zn/Au Structure", Japanese Journal of Applied Physics, vol. 19, No. 8 Aug. 1980, pp. L491-L494.
F. A. Thiel et al., "Contacts to p-Type InP," J. Electrochem, Soc.: Solid-State Science and Technology, vol. 124, No. 2, Feb. 1977, pp. 317-318.
E. Kuphal, "Low Resistance Ohmic Contacts to n- And P-InP", Solid State Electronics, vol. 24, (1980), pp. 69-79.
"Low-Resistance Ohmic Contacts to p-InP" Electronics Letters, vol. 18, No. 17, Aug. 19, 1982, pp. 755-756.
Boos John B.
Papanicolaou Nicolas A.
Weng Tung H.
Chaudhuri Olik
Edelberg Barry A.
Griffis Andrew
McDonnell Thomas E.
The United States of America as represented by the Secretary of
LandOfFree
TiW diffusion barrier for AuZn ohmic contact to P-Type InP does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with TiW diffusion barrier for AuZn ohmic contact to P-Type InP, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TiW diffusion barrier for AuZn ohmic contact to P-Type InP will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1648177