Titanium-tungsten target material and manufacturing method there

Details Titanium-tungsten target material and manufacturing method there Titanium-tungsten target material and manufacturing method there

1992-07-16

1994-03-29

Nelson, Peter A.

Stock material or miscellaneous articles

All metal or with adjacent metals

Having metal particles

428546, 428567, 148513, 419 48, 419 53, B22F 700

Patent

active

052983382

ABSTRACT:
A titanium-tungsten target material used to form, by sputtering, a barrier metal or the like for use in semiconductor devices. The titanium-tungsten target material is substantially composed of tungsten particles and a titanium-tungsten alloy phase surrounding the tungsten particles. The area ratio at which tungsten grains occupy in a cross section of the titanium-tungsten target material is, preferably, not more than 15%, more preferably, not more than 10%. If the average crystal grain size of the target material is not more greater 15 .mu.m, a uniform thin film can be obtained by sputtering. The target material can be obtained by sintering a titanium powder and a tungsten powder.

REFERENCES:
patent: 4331476 (1982-05-01), Helderman et al.
patent: 4838935 (1989-06-01), Dunlop et al.
patent: 4862318 (1989-08-01), Galvagni et al.
patent: 5160534 (1992-11-01), Hiraki
International Journal of Refractory Metals and Hard Materials vol. 9, No. 3, Sep. 1990, Amsterdam, NL pp. 146-153, M. Yamauchi et al `Development of W-TI Binary Alloy Sputtering Target and Study of its Sputtering Characteristics` p. 148, right-hand column "Microstructure of W-TI Binary Alloy".
Patent Abstracts of Japan, vol. 13, No. 137 (C-582) Apr. 1989 & JP-A-63 303 017 (Nippon Mining Co. Ltd.) Dec. 9, 1988.
Patent Abstracts of Japan vol. 16, No. 71 (C-913) Feb. 21, 1992 & JP-A-32 64 640 (Hitachi Metals Ltd.) Nov. 25, 1991.

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