Titanium target for sputtering and production method for same

Details Titanium target for sputtering and production method for same Titanium target for sputtering and production method for same

1996-03-29

1998-08-25

Sheehan, John

Metal treatment

Stock

Titanium, zirconium, or hafnium base

148670, C22C 1400

Patent

active

057980055

ABSTRACT:
Provided are a titanium target material which can easily form a film in a narrow and deep contact hole and reduce the generation of PARTICLES. The present invention relates to a titanium target for sputtering, wherein X-ray diffraction intensity ratios on a sputtering plane are (0002)/(1011).gtoreq.0.8, (0002)/(1010).gtoreq.6; a recrystallized structure which has an average crystal grain size of 20 .mu.m or less and in which the proportion of crystal grains in which an acicular structure is present is 20% or less in terms of an area rate is formed.

REFERENCES:
patent: 4678506 (1987-07-01), Bania
patent: 4793854 (1988-12-01), Shimotori et al.
patent: 4891066 (1990-01-01), Shimotori et al.
patent: 5196916 (1993-03-01), Ishigami et al.
patent: 5204057 (1993-04-01), Ishigami et al.

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