Titanium silicide process

Details Titanium silicide process Titanium silicide process

1995-12-07

1997-11-11

Tsai, Jey

Fishing, trapping, and vermin destroying

437192, H01L 2128

Patent

active

056863594

ABSTRACT:
The specification describes a process for siliciding silicon metallization with titanium. The process requires two anneal steps and is based on careful control of operating parameters during the first anneal step. A prescription is given relating time and temperature of anneal, and titanium film thickness, to silicide resistivity. Proper choice of parameters also minimizes variables in the process.

REFERENCES:
patent: 5023201 (1991-06-01), Standsolovich et al.
patent: 5043300 (1991-08-01), Nulmon
patent: 5194405 (1993-03-01), Sumi et al.
Mollardeau et al, "Characterization of TiSi.sub.2 Ohmic and Schotticy Contacts Formed by Rapid Thermal Annealing Technology", J. Electrochem. Soc., vol. 136, No. 1, Jan. 1989, pp. 238-241.
S. Wolf, "Silicon Processing for the VLSI Era, vol. 2", Lattice Press, pp. 144-150, 1990.

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