Titanium nitride MOS device gate electrode and method of produci

Details Titanium nitride MOS device gate electrode and method of produci Titanium nitride MOS device gate electrode and method of produci

1985-09-24

1986-08-12

Edlow, Martin H.

357 231, 357 67, 357 71, H01L 2978, H01L 2350, H01L 2352, H01L 2962

Patent

active

046059474

ABSTRACT:
An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.

REFERENCES:
patent: 3879746 (1975-04-01), Fournier
patent: 4141022 (1979-02-01), Sigg et al.

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