Titanium nitride film in contact hole with large aspect ratio

Details Titanium nitride film in contact hole with large aspect ratio Titanium nitride film in contact hole with large aspect ratio

1988-05-26

1990-01-30

Mintel, William

Fishing, trapping, and vermin destroying

357 54, 357 55, 357 71, 357 236, 437197, 437203, 437243, 437190, H01L 2348

Patent

active

048977098

ABSTRACT:
A semiconductor device includes a titanium nitride film as a barrier which is formed in a hole. The width or diameter of the hole is smaller than 1 .mu.m, and the aspect ratio thereof is larger than 0.7. The sidewall of the hole is substantially perpendicular to the surface of a semiconductor substrate. By the low pressure CVD method with a cold wall type CVD apparatus, it becomes possible to form the titanium nitride film having excellent characteristics with a good step coverage in a considerably fine hole having a large aspect ratio.

REFERENCES:
patent: 4556897 (1985-12-01), Yorikane et al.
patent: 4570328 (1986-02-01), Price et al.
patent: 4743953 (1988-05-01), Toyokura et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4784973 (1988-11-01), Stevens et al.
Kahelus et al, "Bias-Induced Stress Transitions in Sputtered Tin Films", J. Vac. Sci. Technol. A, vol. 4, No. 4, Jul./Aug. 1986, pp. 1850-1854.
"Tin Formed by Evaporation as a Diffusion Barrier Between Al and Si", Ting, J. Vac. Sci.Technol. 21(1), May/Jun. 1982, pp. 14-18.

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