Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1995-08-18
1997-01-21
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272551, 427255, 4272557, 427253, 427569, 4274197, C23C 1600, B05D 306
Patent
active
055957846
ABSTRACT:
A gaseous mixture of a titanium halide and silane is introduced to a plasma or thermal CVD reactor to induce a reaction such that a conformal and pure titanium film is deposited onto a semiconductor device within the reactor. The titanium halide has a chemical form of TiX.sub.4, where X is a halogen. Other gaseous combinations of the titanium halide, ammonia, hydrogen, a halogen and silane are subjected to plasma or thermal CVD to induce a reaction to deposit titanium silicide and titanium nitride films onto the semiconductor device. Successive CVD processes create bilayers of TiSi.sub.x /TiN or Ti/TiN, and/or trilayers of TiSi.sub.x /Ti/TiN onto the semiconductor device.
REFERENCES:
patent: 4977106 (1990-12-01), Smith
patent: 5273588 (1993-12-01), Foster et al.
patent: 5399379 (1995-03-01), Sandhu
Pierson, "Handbook of Chemical Vapor Deposition (CVD), Principles, Technology and Applications," (1992) pp. 246-247.
Akahori et al., "TiN/Ti Films Formation Using ECR Plasma CVD" Jun. 8-9, 1993 VMIC Conference 1993 ISMIC-102/93/0405.
Goldberg et al., "Low temperature in-situ sequential chemical vapor deposition of Ti/TiN ultrathin bilayers for ULSI barrier applications" Conference Paper from Advanced Metalization for ULSI Applications (1994).
Kaim Robert
Vanderpot John W.
King Roy V.
Vock Curtis A.
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