Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-08-09
2011-08-09
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S003000, C257S053000, C257S295000, C257S485000, C136S246000, C136S255000, C136S257000, C136S216000
Reexamination Certificate
active
07994602
ABSTRACT:
A thin-film metal-oxide compound includes a titanium dioxide layer having a thickness of about 100 to 1000 nanometers. The titanium dioxide layer has a single-phase anatase structure. The titanium dioxide layer is directly disposed on a substrate comprised of glass, sapphire, or silicon. A solar cell includes a backing layer, a p-n junction layer, a metal-oxide layer, a top electrical layer and a contact layer. The backing layer includes a p-type semiconductor material. The p-n junction layer has a first side disposed on a front side of the backing layer. The metal-oxide layer includes an n-type titanium dioxide film having a thickness in the range of about 100 to about 1000 nanometers. The metal-oxide layer is disposed on a second side of the p-n junction layer. The top electrical layer is disposed on the metal-oxide layer, and the contact layer is disposed on a back side of the backing layer.
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Al-Homoudi Ibrahim Abdullah
Auner Gregory W.
Newaz Golam
Brinks Hofer Gilson & Lione
Le Dung A.
Wayne State University
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