Metal working – Method of mechanical manufacture – Electrical device making
Patent
1995-06-06
1998-05-05
Arbes, Carl J.
Metal working
Method of mechanical manufacture
Electrical device making
437 12, 437192, H01K 310
Patent
active
057459908
ABSTRACT:
Titanium is deposited using a low-pressure chemical-vapor deposition to provide good step coverage over an underlying integrated circuit structure. A rapid thermal anneal is performed using an ambient including diborane. The rapid thermal anneal causes the titanium to interact with underlying silicon to form titanium silicide. Concurrently, the diborane reacts with the titanium to form titanium boride. A composite barrier layer results. Aluminum is deposited and then patterned together with the composite barrier layer to define a first level metalization. Subsequent intermetal dielectrics, metalization, and passivation layers can be added to form a multi-level metal interconnect structure. The titanium boride prevents the aluminum from migrating into the silicon, while the titanium silicide lowers the contact resistivity associated with the barrier layer. The relatively close match of the thermal coefficients of expansion for titanium boride and silicon provides high thermal stability.
REFERENCES:
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Fujishiro Felix H.
Koenigseder Sigmund
Lee Chang-Ou
Vines Landon B.
Anderson Clifton L.
Arbes Carl J.
VLSI Technology Inc.
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