Titanium/aluminum/nitrogen material for semiconductor devices

Details Titanium/aluminum/nitrogen material for semiconductor devices Titanium/aluminum/nitrogen material for semiconductor devices

1992-01-31

1993-07-27

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257763, 257765, 257771, H01L 2348

Patent

active

052313069

ABSTRACT:
A barrier material for use in preventing interdiffusion of silicon and aluminum at silicon/aluminum interfaces comprises a layer of titanium, aluminum, and nitrogen between about 100.ANG. and 1000.ANG. thick. The barrier material comprises between 1% and 20% aluminum, between 30% and 60% titanium, and between 30% and 60% nitrogen. The TiAlN material is more resistant to diffusion than TiN and can be etched and sputtered like TiN. It has better thermal budget than TiN and better stability on silicon, and thus can replace TiN in many of its uses in semiconductor devices.

REFERENCES:
patent: 4823182 (1989-04-01), Okumura
patent: 4926237 (1990-05-01), Sun et al.
patent: 4976839 (1990-12-01), Inoue
patent: 4977440 (1990-12-01), Stevens
patent: 4980239 (1990-12-01), Harada et al.
patent: 4990997 (1991-02-01), Nishida
patent: 5093710 (1992-03-01), Higuchi
The effects of chlorine content on the properties of titanium carbonitride thin film deposited by plasma assisted chemical vapor deposition By Si Bum Kim, Si Kyung Choi, and Soung Soon Chun, Jul./Aug. 1991.

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