Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-09-18
1999-11-23
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 38, 257751, 257752, 257774, 438720, 438742, H01L 2100
Patent
active
059900113
ABSTRACT:
The novel process forms a first recess, such as a contact hole, within a first dielectric layer upon a semiconductor substrate. At least one diffusion barrier layer, selected from a group consisting of ceramics, metallics, and intermetallics, is formed within the first recess and at least partially conformably formed upon the first dielectric layer. A first electrically conductive layer is then formed within the recess over a said diffusion barrier layer. Preferably, the first electrically conductive layer is substantially composed of tungsten. The first electrically conductive layer is planarized above the recess thereby forming a top surface thereof. A second dielectric layer is formed over the first dielectric layer and said first electrically conductive layer. A second recess is formed in the second dielectric layer. The second recess extends from an upper surface of the second dielectric layer to the top surface of the first electrically conductive layer. The second recess has a bottom formed at least partially by the top surface of the first electrically conductive layer. A wetting layer composed of a titanium-aluminum alloy, is formed within the second recess over the second dielectric layer. A second electrically conductive layer then formed to substantially fill the second recess over the wetting layer. The wetting layer enables the second electrically conductive layer to substantially fill the second recess while being deposited at lower temperatures than conventional deposition processes. A portion of the wetting layer and the electrically conductive layer situated above the upper surface of the second dielectric layer is selectively removed by planarizing to form a planar top surface.
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G. Yao, et al., Charaterization of Ti TiN, TiAl Films As Wetting Layers For Aluminum Planarization, pp. 220-222, Jun. 27-29, 1995 VMIC Conference, ISMIC--104/95/0220.
Micro)n Technology, Inc.
Powell William
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