TiSi.sub.2 /TiN clad interconnect technology

Details TiSi.sub.2 /TiN clad interconnect technology TiSi.sub.2 /TiN clad interconnect technology

1995-01-06

1999-08-10

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257384, 257764, 257915, H01L 2348

Patent

active

059363061

ABSTRACT:
A TiSi.sub.2 /TiN clad LI strap process and structure are disclosed which combine the advantages of both TiSi.sub.2 and TiN LI processes. According to the invention, the retention of a thin TiN layer between the local interconnect and contacts provides a diffusion barrier against counterdoping and relaxes the thermal budget for subsequent processing.

REFERENCES:
patent: 3777364 (1973-12-01), Schinella et al.
patent: 4746219 (1988-05-01), Holloway et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4804636 (1989-02-01), Groover, III et al.
patent: 4814854 (1989-03-01), Tigelaar et al.
patent: 4962414 (1990-10-01), Liou et al.
patent: 4975756 (1990-12-01), Haken et al.
patent: 5091763 (1992-02-01), Sanchez
patent: 5168076 (1992-12-01), Godinho et al.
patent: 5173450 (1992-12-01), Wei
1993 Symp. on VLSI Tech. p. 106 Kyoto, May 17-19, 1993.

Affiliated with

Also associated with

Rating

TiSi.sub.2 /TiN clad interconnect technology does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with TiSi.sub.2 /TiN clad interconnect technology, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and TiSi.sub.2 /TiN clad interconnect technology will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1122620