Tip array structure and fabricating method of tip structure

Scanning-probe techniques or apparatus; applications of scanning – General aspects of spm probes – their manufacture – or their... – Probe manufacture

Reexamination Certificate

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C977S875000, C438S020000, C216S011000, C445S046000, C445S049000, C445S050000, C430S330000, C430S311000

Reexamination Certificate

active

07814566

ABSTRACT:
A fabricating method of a structure having nano-hole is provided. The fabricating method includes: providing a substrate, forming a photoresist layer on the substrate, forming an opening, and performing a heat treatment process on the photoresist layer to shrink the opening to form a nano-hole. The structure having nano-hole fabricated by the method of the present invention can be used to fabricate a nano-tip having a diameter of tip-body of no more than 10 nm, high aspect ratio, and a uniform diameter of tip-body.

REFERENCES:
patent: 2004/0023046 (2004-02-01), Schlottig et al.
patent: 2008/0166664 (2008-07-01), Nomura
Huq et al., “Fabrication of sub-10 nm silicon tips: A new approach”, Journal of Vacuum Science & Technology B, vol. 13, No. 6, Nov./Dec. 1995, pp. 2718-2721.
Chou et al., “Sub-10 nm imprint lithography and applications”, Journal of Vacuum Science & Technology B, vol. 15, No. 6, Nov./Dec. 1997, pp. 2897-2904.
Wei-Su Chen,Ming-Jer Kao,Ming-Jinn Tsai. “Sub-10 nm Contact Holes with Aspect Ratio over Sixty Formed by E-beam Resist Shrinkage Techniques”/SPIE Advanced lithography 2007, vol. 6519-167 (p.1 of 12).

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