Tin oxide-based sputtering target, low resistivity,...

Details Tin oxide-based sputtering target, low resistivity,... Tin oxide-based sputtering target, low resistivity,...

2006-10-31

2008-11-18

Kopec, Mark (Department: 1796)

Compositions

Electrically conductive or emissive compositions

C204S192220, C204S192260, C423S054000, C428S142000, C428S432000, C428S655000

Reexamination Certificate

active

07452488

ABSTRACT:
The present invention is directed to a composition consisting essentially of:a) from about 60 to about 99 mole % of SnO2, andb) from about 1 to about 40 mole % of one or more materials selected from the group consisting ofi) Nb2O5,ii) NbO,iii) NbO2,iv) WO2,v) a material selected consisting of a) a mixture of MoO2and Mo and b) Mo,vi) W,vii) Ta2O5, andviii) mixtures thereof,wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

REFERENCES:
patent: 4707346 (1987-11-01), Hormadaly
patent: 6193856 (2001-02-01), Kida et al.
patent: 6534183 (2003-03-01), Inoue
patent: 6586101 (2003-07-01), Chu
patent: 6689477 (2004-02-01), Inoue
patent: 6818924 (2004-11-01), Kim et al.
patent: 6911163 (2005-06-01), Abe
patent: 6979435 (2005-12-01), Shahriari et al.
patent: 2004/0013899 (2004-01-01), Abe
patent: 2005/0082162 (2005-04-01), Uno et al.
patent: 2005/0239660 (2005-10-01), Abe et al.
patent: 2006/0046026 (2006-03-01), Fujisawa et al.
patent: 2006/0099140 (2006-05-01), Abe
patent: 2006/0165572 (2006-07-01), McHugh et al.
patent: 2007/0071985 (2007-03-01), Kumar et al.
patent: 58-054338 (1983-03-01), None
patent: 61256506 (1986-11-01), None
patent: 2000-077358 (2000-03-01), None
patent: 2000-234167 (2000-08-01), None
patent: 2000 273622 (2000-10-01), None
patent: 2000-273622 (2000-10-01), None
patent: 2000 281431 (2000-10-01), None
patent: 2000-281431 (2000-10-01), None
patent: 2002-275624 (2002-09-01), None
patent: 2003-226966 (2003-08-01), None
patent: WO 2005-040044 (2005-05-01), None
patent: WO 2005-078152 (2005-08-01), None
patent: WO 2005-086180 (2005-09-01), None
patent: WO-2007/041081 (2007-04-01), None
patent: WO-2007/055231 (2007-05-01), None
patent: WO-2007/142043 (2007-12-01), None
patent: WO-2007/142330 (2007-12-01), None
Nitta M., Kanefuas S., and Hardroma M.; Propane Gas Detector Using SnO2 doped with NB, V, Ti, or Mo; 1978; J. Electrochem. Soc.; vol. 125 pp. 1676-1679.
G. Hass et al., Transparent Conducting Films, 1977, vol. 9, pp. 1-71.
Journal of Materials Science, vol. 40, month unavailable 2005, pp. 1611-1614, Y Abe et al, “Amorphous indium tungsten oxide films prepared by DC magnetron sputtering”.
MRS Bulletin, Aug. 2000, pp. 45-51, A.J. Freeman et al, “Chemical and Thin-Film Strategies for New Transparent Conducting Oxides”.
Coating Materials News, vol. 15, Issue 1, Mar. 2005, p. 1 and 3, “Transparent Conductive Oxides: ITO Replacements”.
Journal of Electroceramics, vol. 13, month unavailable 2004, pp. 167-175, B.J. Ingram et al, “Chemical and Structural Factors Governing Transparent Conductivity in Oxides”.
Semiconductor Science and Technology, vol. 20, month unavailable 2004, pp. S35-S44, “Transparent conducting oxide semiconductors for transparent electrodes”.
Applied Physics Letters, vol. 87, month unavailable 2005, pp. 112108-1-112108-3, P.F. Newhouse et al, “High electron mobility W-doped In2O3thin films by pulsed laser deposition”.
Journal of the Korean Physical Society, vol. 44, No. 4, Apr. 2004, pp. 956-961, Honglyoul Ju et al, “Electrical and Optical Properties of New Transparent Conducting Oxide In2O3:Ta Thin Films”.
J. Phys. D: Appl. Phys. 23, month unavailable 1990, pp. 1212-1215, V. Casey et al, “A study of undoped and molybdenum doped, polycrystalline, tin oxide thin films produced by a simple reactive evaporation technique”.

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