Tin-lead purification of silicon

Details Tin-lead purification of silicon Tin-lead purification of silicon

1973-11-30

1976-01-20

Stern, Edward

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

23273SP, 23301R, 23301SP, C01B 3302

Patent

active

039339815

ABSTRACT:
Disclosed is a method of purifying silicon by introducing the silicon into liquid tin-lead alloy at a certain temperature. The silicon goes into solution with the tin-lead alloy, after which the temperature of the liquid metal solution is reduced to a temperature low enough to cause the solution to become super-saturated with respect to silicon which then solidifies as pure material. The solid pure silicon is withdrawn from the tin-lead solution leaving substantially all of the impurities behind.

REFERENCES:
patent: 2402582 (1946-06-01), Scaff
patent: 3031403 (1962-04-01), Bennett, Jr.
patent: 3069240 (1962-12-01), Armand
patent: 3097068 (1963-07-01), Litz et al.
Book "Preparation of Single Crystals," by W. D. Lawson and S. Nielsen, 1958 Ed., p. 93, Buttersworths Scientific Publications, London.

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