Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1993-03-03
1995-10-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257200, 257741, 257735, H01L 2348, H01L 2946, H01L 2962, H01L 2964
Patent
active
054573300
ABSTRACT:
An adhesive ohmic contact made to a p-type semiconductor metal substrate or layer (10) comprises tin. The contact preferably includes a tin film (24) approximately 2000 .ANG. in thickness. The p-type semiconductor compound contains mercury and, while described in conjunction with Hg.sub.1-x Cd.sub.x Te, other elements exhibiting group II and group VI chemical behavior and properties may be used. A cap layer (30) is deposited over film (24), followed by insulating layer 32. Via (34) is then formed and, to complete contact (50), a metal (36) is deposited inside via (34).
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Simmons Arturo
Turner Arthur M.
Carlson Brian A.
Clark S. V.
Crane Sara W.
Donaldson Richard L.
Kesterson James C.
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