Time recording device and a time recording method employing...

Details Time recording device and a time recording method employing... Time recording device and a time recording method employing...

2005-06-21

2005-06-21

Deb, Anjan (Department: 2858)

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

C324S763010, C257S048000

Reexamination Certificate

active

06909294

ABSTRACT:
A time recording device employs a floating gate cell, wherein an ON layer structure or an ONO layer structure is provided between floating gate and control gate. A charge injection unit is provided to inject charges into the floating gate electrode and into the nitride layer of the ON structure or the ONO structure by applying a voltage or voltage pulses to the control gate electrode, a center of concentration of the charges injected into the nitride layer being located at the interface between oxide layer and nitride layer of the layer sequence. The time recording device also includes a unit for recording a time which has elapsed since charge injection on the basis of changes in the transmission behavior of the channel region caused by a shift in the center of concentration of the charges in the nitride layer away from the interface.

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patent: 5760644 (1998-06-01), Lancaster et al.
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patent: 6087885 (2000-07-01), Tobita
patent: 04294292 (1992-10-01), None
patent: 01/17025 (2001-03-01), None

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