Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-05-27
2008-05-27
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S189040
Reexamination Certificate
active
07379343
ABSTRACT:
Shifts in the apparent charge stored on a floating gate of a non-volatile memory cell can occur because of coupling of an electric field based on the charge stored in adjacent floating gates. The shift in apparent charge can lead to erroneous readings by raising the apparent threshold voltage, and consequently, lowering the sensed conduction current of a memory cell. The read process for a selected memory cell takes into account the state of one or more adjacent memory cells. If an adjacent memory cell is in one or more of a predetermined set of programmed states, a compensation current can be provided to increase the apparent conduction current of the selected memory cell. An initialization voltage is provided to the bit line of the programmed adjacent memory cell to induce a compensation current between the bit line of the programmed adjacent memory cell and the bit line of the selected memory cell.
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Elms Richard T.
Nguyen Dang
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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