Tight control of resistor valves in a SRAM process

Details Tight control of resistor valves in a SRAM process Tight control of resistor valves in a SRAM process

1994-07-07

1995-01-24

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437919, H01L 2170

Patent

active

053842782

ABSTRACT:
A method of forming a polycrystalline silicon resistor includes the step of forming a resistor region of poly, the region being doped per a desired resistivity of the resistor. The exposed top and side portions of the poly region are completely covered with an insulating oxide. A predetermined portion of the oxide is etched away, resulting in a portion of the oxide completely covering the resistor poly. The resistor poly region and oxide are covered (masked) with photoresist, the mask extending beyond the sides of the poly. The remaining oxide in the area outside of the mask is etched away, and the photoresist is removed.

REFERENCES:
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patent: 4277881 (1991-07-01), Godejahn
patent: 4397077 (1983-08-01), Denbenwick et al.
patent: 4408385 (1983-10-01), Mohan Rao et al.
patent: 4416049 (1983-11-01), McElmoy
patent: 4849366 (1989-07-01), Hsu et al.
patent: 4868135 (1989-09-01), Ogura et al.

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