Ti(N) thin-film resistor deposited on ALN substrate and...

Details Ti(N) thin-film resistor deposited on ALN substrate and... Ti(N) thin-film resistor deposited on ALN substrate and...

2011-05-03

2011-05-03

Lee, Kyung (Department: 2833)

Electrical resistors

With base extending along resistance element

Resistance element coated on base

C438S592000, C438S488000

Reexamination Certificate

active

07936248

ABSTRACT:
The present invention relates to a thin-film resistor for an attenuator that is utilized in the fourth generation mobile communication, and more specifically, to a thin-film resistor having a Ti(N) thin film formed on an aluminum nitride (ALN) substrate. The thin-film resistor of the invention has superior electrical characteristics, such as sheet resistance, and superior characteristics in change of attenuation and voltage standing wave ratio (VSWR) with respect to changes of frequency and L/W, and thus the thin-film resistor can be utilized in a high frequency domain of up to 6 GHz.

REFERENCES:
patent: 6149999 (2000-11-01), Suzuki et al.
patent: 6466124 (2002-10-01), Shibuya et al.
patent: 6573169 (2003-06-01), Noble et al.
patent: 2004/0053492 (2004-03-01), Sandhu et al.
patent: 2006/0124983 (2006-06-01), Kutsunai et al.
Nguyen, Duy Cuong et al., “Ti(N) thin film resistors for 20 dB II-type attenuator applications”, Applied Physics Letters 90, (Received Jan. 27, 2007; accepted Apr. 5, 2007, published online May 1, 2007); pp. 1-3.

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