Thyristor with switchable emitter short circuit

Details Thyristor with switchable emitter short circuit Thyristor with switchable emitter short circuit

1986-12-12

1988-05-10

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 38, 357 55, 357 72, 307305, H01L 2906

Patent

active

047439505

ABSTRACT:
In thyristor having disconnectable emitter short circuits provided by means of monolithically integrated transistor structure, wherein a simplified production and improved control of the short circuits is achieved by the fact that a bipolar structure is integrated as the transistor structure into the component. In a preferred illustrative embodiment, the n.sup.+ -type emitter layer of the thyristor is interrupted by intermediate spaces in which the transistor structure is in each case disposed.

REFERENCES:
patent: 3622841 (1971-11-01), Zoroglu
patent: 4298881 (1981-11-01), Sakurada et al.
patent: 4398205 (1983-08-01), Spellman et al.
J. Mena et al., "High Freq. Perf. of VDMOS Power Trans.," 1980 Proc. I.E.D.M., pp. 91-94.

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