Thyristor with insulated gate

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257139, 257137, H01L 2974, H01L 31111

Patent

active

053151348

ABSTRACT:
A thyristor with an insulated gate includes a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. A drain electrode contacting the p-type base layer is formed adjacent to one side of the n-type emitter layer. An n-type drain layer, which is short-circuited with the p-type base layer by the drain electrode, is formed. An n-type source layer is formed a predetermined distance away from the n-type drain layer. A turn-off insulated gate is formed between the n-type source layer and the n-type drain layer. A source electrode is connected to a cathode electrode. Thereby, turn-off capability of the thyristor can be improved.

REFERENCES:
patent: Re32784 (1988-11-01), Nakagawa et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4760431 (1988-06-01), Nakagawa et al.
patent: 4782372 (1988-11-01), Nakagawa et al.
patent: 4857983 (1989-08-01), Baliga et al.
patent: 4860072 (1989-08-01), Zommer
patent: 4866315 (1988-02-01), Ogura et al.
patent: 4881120 (1989-11-01), Nakagawa et al.
patent: 4912541 (1990-03-01), Baliga et al.
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 4928155 (1990-05-01), Nakagawa et al.
patent: 4959703 (1990-09-01), Ogura et al.
patent: 4963951 (1990-10-01), Adler et al.
patent: 4963972 (1990-10-01), Shinohe et al.
patent: 4994696 (1991-02-01), Ogura et al.
patent: 5086323 (1992-02-01), Nakagawa et al.
patent: 5093701 (1992-03-01), Nakagawa et al.
MOS Controlled Thyristors V.A.K. Temple, 1984.
MOS GTO Stoisiek et al, 1985.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thyristor with insulated gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thyristor with insulated gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thyristor with insulated gate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1974663

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.