Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1992-06-10
1994-05-24
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, 257137, H01L 2974, H01L 31111
Patent
active
053151348
ABSTRACT:
A thyristor with an insulated gate includes a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. A drain electrode contacting the p-type base layer is formed adjacent to one side of the n-type emitter layer. An n-type drain layer, which is short-circuited with the p-type base layer by the drain electrode, is formed. An n-type source layer is formed a predetermined distance away from the n-type drain layer. A turn-off insulated gate is formed between the n-type source layer and the n-type drain layer. A source electrode is connected to a cathode electrode. Thereby, turn-off capability of the thyristor can be improved.
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Matsudai Tomoko
Nakagawa Akio
Ogura Tsuneo
Watanabe Kiminori
Yamaguchi Yoshihiro
Abraham Fetsum
Kabushiki Kaisha Toshiba
Sikes William L.
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