Thyristor with improved dv/dt resistance

Details Thyristor with improved dv/dt resistance Thyristor with improved dv/dt resistance

1995-02-14

1997-06-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

257113, 257115, 257166, 257175, H01L 2974

Patent

active

056378866

ABSTRACT:
When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I.sub.10 to I.sub.30) which are responsive to junction capacitances (C.sub.10 to C.sub.30) of respective unit thyristors (ST.sub.1, ST.sub.2, MT) are generated. The displacement currents (I.sub.10 to I.sub.30) flow into a compensation electrode (C) through paths in a P base layer (2) having resistances (R.sub.10 to R.sub.30), and further flow to an external power source through the cathode electrode (K) which is short-circuited with the compensation electrode (C). The paths of the three displacement currents (I.sub.10 to I.sub.30) are separated from each other by resistances (R.sub.12, R.sub.23). Therefore, a forward bias voltage of a junction (D.sub.10) caused by the displacement current (I.sub.10) is attenuated by the displacement current (I.sub.20), while a forward bias voltage of a junction (D.sub.20) caused by the displacement current (I.sub.20) is attenuated by the displacement current (I.sub.30). Thus, it is possible to improve a thyristor of a multistage structure in dv/dt resistance, at no sacrifice of sensitivity.

REFERENCES:
patent: 4614962 (1986-09-01), Bertotti et al.
patent: 4740480 (1988-04-01), Oaka

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