Thyristor with high positive and negative blocking capability an

Details Thyristor with high positive and negative blocking capability an Thyristor with high positive and negative blocking capability an

1991-06-27

1991-12-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 40, 437 51, 437 59, 357 38, 357 39, H01L 4900

Patent

active

050772244

ABSTRACT:
A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.

REFERENCES:
patent: 4516315 (1985-05-01), Przybysz et al.
patent: 4555845 (1985-12-01), Przybysz
patent: 4569118 (1986-02-01), Baliga et al.
patent: 4587712 (1986-05-01), Baliga
patent: 4662957 (1987-05-01), Hagino
patent: 4691223 (1987-09-01), Murakami et al.
patent: 4792530 (1988-12-01), Niiarp
patent: 4861731 (1989-08-01), Bhagat
"Thyristor-Handbuch", by A. Hoffman et al., Siemens AG, Berlin & Munich, (1965), pp. 37-38.
"Thyristor Design & Realization", by John Wiley & Sons, New York, (1987) pp. 28-35.

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