Patent
1989-02-16
1991-12-10
Hille, Rolf
357 39, 357 53, 357 55, H01L 2974
Patent
active
050723120
ABSTRACT:
A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.
REFERENCES:
patent: 4691223 (1987-09-01), Murakami et al.
patent: 4901132 (1990-02-01), Kuwano
patent: 4907056 (1990-03-01), Goesele et al.
patent: 4942446 (1990-07-01), Yakushiji
patent: 4963971 (1990-10-01), Rosetti et al.
"Thyristor Design & Realization", by John Wiley & Sons, New York, (1987), pp. 28-35.
Kuhnert Reinhold
Schwarzbauer Herbert
Hille Rolf
Loke Steven
Siemens Aktiengesellschaft
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