Patent
1986-12-24
1988-04-12
Clawson, Jr., Joseph E.
357 20, 357 30, 357 39, 357 234, 357 86, H21L 2974
Patent
active
047378344
ABSTRACT:
A thyristor has a plurality of gate-controlled MIS-FET structures which serve the purpose of controlling emitter short-circuit paths with the objective of achieving stabilization short-circuits and, if necessary, quenching short-circuits. MIS-FET structures are disclosed which are effective, yet make economical use of surface area. In accordance with the invention, this is achieved since structures are provided at a plurality of recesses of the layered n-type emitter such that the electrode contacting the n-type emitter has recesses permitting it to contact the MIS-FET structures only on a border side.
REFERENCES:
patent: 3387358 (1968-06-01), Heiman
Patalong Hubert
Spenke Eberhard
Clawson Jr. Joseph E.
Siemens Aktiengesellschaft
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