Thyristor with breakdown region

Details Thyristor with breakdown region Thyristor with breakdown region

1994-08-08

1995-10-03

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

257169, 257113, 257129, 257153, 257166, H01L 2974, H01L 29743, H01L 29747

Patent

active

054554349

ABSTRACT:
A thyristor includes a semiconductor body with a surface. The semiconductor body has an inner zone of a first conduction type; a cathode-side base zone of a second conduction type opposite the first type, the base zone having a recess formed therein; a layer of the second conduction type being disposed on the surface of the semiconductor body, being disposed in the cathode-side base zone, being thinner than the cathode-side base zone, and being joined to the cathode-side base zone; and an additional zone of the second conduction type being disposed in the recess, being joined to the layer, being thicker than the layer, and being spaced apart from the cathode-side base zone.

REFERENCES:
patent: 5083177 (1992-01-01), Tuerkes et al.
Lowry et al; "Light Activated Semiconductor Switchies", 17/1977; IEEE 1977 National Aerospace and Electronics Conference; pp. 616-622.
Publication: IPEO-Tokyo '83 (Ohashi et al) pp. 550-558 "Design Consideration for High-Power Overvoltage Self-Protected Thyristor".

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