Thyristor switch with turn-off current shunt, and operating...

Details Thyristor switch with turn-off current shunt, and operating... Thyristor switch with turn-off current shunt, and operating...

2007-02-06

2007-02-06

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S133000, C257S135000, C257S136000, C257S138000, C257S139000, C257S140000, C257S146000, C257S147000

Reexamination Certificate

active

10642085

ABSTRACT:
A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor includes a portion of a bottom drift layer, with a p-n junction formed below a gate adjacent to the bottom drift layer to establish a depletion region with a high potential barrier to thyristor current flow at turn-off. The bottom drift layer also provides the transistor base, as well as a current path allowing the transistor base current to be controlled by the thyristor. The switch is voltage-controlled device using an insulated gate for turn-on and turn-off.

REFERENCES:
patent: 4963950 (1990-10-01), Chang et al.
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patent: 5329142 (1994-07-01), Kitagawa et al.
patent: 5471075 (1995-11-01), Shekar et al.
patent: 5977570 (1999-11-01), Takahashi et al.
patent: 6392273 (2002-05-01), Chang
patent: 6399998 (2002-06-01), Chang
Kaushik Rajashekara,Power Semiconductor Devices, The Electrical EngineeringHandbook, Richard C. Dorf, CRE Press, pp. 763-769.

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