Thyristor switch with turn-off current shunt, and operating...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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C257S133000, C257S137000

Reexamination Certificate

active

06965131

ABSTRACT:
A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor includes a portion of a drift layer, with a p-n junction formed below a gate adjacent to the drift layer to establish a depletion region with a high potential barrier to thyristor current flow at turn-off. The drift layer also provides the transistor base, as well as a current path allowing the transistor base current to be controlled by the thyristor. The switch is voltage controlled using an insulated gate.

REFERENCES:
patent: 4963950 (1990-10-01), Chang et al.
patent: 5324967 (1994-06-01), Honma et al.
patent: 5329142 (1994-07-01), Kitagawa et al.
patent: 5471075 (1995-11-01), Shekar et al.
patent: 5977570 (1999-11-01), Takahashi et al.
patent: 6392273 (2002-05-01), Chang
patent: 6399998 (2002-06-01), Chang
Kaushik Rajashekara,Power Semiconductor Devices, The Electrical Engineering Handbook, Richard C. Dorf, CRE Press, pp. 763-769, 1997.

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