Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Reexamination Certificate
2007-04-17
2007-04-17
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
C257S355000, C257S173000, C257SE29225
Reexamination Certificate
active
10657899
ABSTRACT:
A thyristor structure having a first terminal, formed as a first region with a first conductivity type, is provided. A second region of a second conductivity type adjoins the first region. A third region of the first conductivity type, which adjoins the second region, has a common surface with the latter. A second terminal, as fourth region of the second conductivity type, adjoins the third region. At the common surface of the second region and the third region, an auxiliary electrode is disposed in a manner adjoining at least one of the two regions.
REFERENCES:
patent: 3586928 (1971-06-01), Bergman et al.
patent: 4695916 (1987-09-01), Satoh et al.
patent: 4779126 (1988-10-01), Herman
patent: 4896243 (1990-01-01), Chatterjee et al.
patent: 4980741 (1990-12-01), Temple
patent: 5072273 (1991-12-01), Avery
patent: 5077591 (1991-12-01), Chen et al.
patent: 5126816 (1992-06-01), Reczek et al.
patent: 5182220 (1993-01-01), Ker et al.
patent: 5235201 (1993-08-01), Honna
patent: 5272363 (1993-12-01), Pezzani
patent: 5400202 (1995-03-01), Metz et al.
patent: 5453384 (1995-09-01), Chatterjee
patent: 5465189 (1995-11-01), Polgreen et al.
patent: 5517379 (1996-05-01), Williams et al.
patent: 5576557 (1996-11-01), Ker et al.
patent: 5637900 (1997-06-01), Ker et al.
patent: 5682047 (1997-10-01), Consiglio et al.
patent: 5739998 (1998-04-01), Wada
patent: 5754380 (1998-05-01), Ker et al.
patent: 5907462 (1999-05-01), Chatterjee et al.
patent: 5945723 (1999-08-01), Mori
patent: 5977594 (1999-11-01), Takao
patent: 6081002 (2000-06-01), Amerasekera et al.
patent: 6215135 (2001-04-01), Schroder
patent: 6323523 (2001-11-01), Lee et al.
patent: 6353247 (2002-03-01), Pan
patent: 6423987 (2002-07-01), Constapel et al.
patent: 6424013 (2002-07-01), Steinhoff et al.
patent: 6469325 (2002-10-01), Ishizuka et al.
patent: 6479869 (2002-11-01), Hiraga
patent: 6542346 (2003-04-01), Chen et al.
patent: 6548865 (2003-04-01), Fujihira et al.
patent: 6713841 (2004-03-01), Gossner
patent: 2003/0075726 (2003-04-01), Ker et al.
patent: 1 045 444 (2000-10-01), None
patent: 1 058 308 (2000-12-01), None
patent: 61-12072 (1986-01-01), None
patent: 00/086888 (2000-02-01), None
Greenberg Laurence A.
Infineon - Technologies AG
Le Thao X.
Locher Ralph E.
Stemer Werner H.
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