Thyristor semiconductor memory device and method of manufacture

Details Thyristor semiconductor memory device and method of manufacture Thyristor semiconductor memory device and method of manufacture

2006-02-14

2006-02-14

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S048000

Reexamination Certificate

active

06998298

ABSTRACT:
A thyristor memory device may comprise a capacitor electrode formed over a base region of the thyristor using a replacement gate process. During formation of the thyristor, a base-emitter boundary may be aligned relative to a shoulder of the capacitor electrode. In a particular embodiment, the replacement gate process may comprise defining a trench in a layer of dielectric over semiconductor material. Conductive material for the electrode may be formed over the dielectric and in the trench. It may further be patterned to form a shoulder for the electrode that extends over regions of the dielectric over a base region for the thyristor. The extent of the shoulder may be used to pattern the dielectric and/or to assist alignment of implants for the base and emitter regions of the thyristor.

REFERENCES:
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: 2004/0041212 (2004-03-01), Bhattacharyya
C.K. Chen;SLOTFET Fabrication of Self-Aligned Sub-100-nm Fully-Depleted SOI CMOS; 2000 IEEE International SOI Conference, pp. 82-83, Oct. 2000.
C.K. Chen;Fabrication of Self-Aligned 90-nm Fully Depleted SOI CMOS SLOTFETs; IEEE Electron Device Letters, vol. 22, No. 7, pp. 345-347, Jul. 2001.

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