Thyristor optimized for a sinusoidal HF control

Details Thyristor optimized for a sinusoidal HF control Thyristor optimized for a sinusoidal HF control

2006-12-15

2009-11-03

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257SE29211

Reexamination Certificate

active

07612387

ABSTRACT:
A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.

REFERENCES:
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patent: 5134082 (1992-07-01), Kirchgessner
patent: 5357125 (1994-10-01), Kumagi
patent: 5998812 (1999-12-01), Bernier et al.
patent: 6175143 (2001-01-01), Fujihira et al.
patent: 6423986 (2002-07-01), Zhao
patent: 2005/0224810 (2005-10-01), Ohno
French Search Report from corresponding French Application No. 05/53914, filed Dec. 16, 2005.

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