Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1979-11-14
1982-04-06
Zazworsky, John
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307252A, 307252J, 307305, 307310, 357 28, 357 30, H03K 1772
Patent
active
043237932
ABSTRACT:
An external resistance is presented between the gate and cathode of a thermally sensitive thyristor which varies in accordance with a changing voltage applied across the thyristor. The changing voltage sweeps the varying external resistance through its operating range which in turn expands the region of temperature sensitivity with respect to breakover voltage by sweeping the shifting curves of switching temperature vs. gate to cathode resistance for the thyristor. In preferred form, a field effect transistor (FET) (10) is connected between the gate (8) and cathode (4) of the thermally sensitive thyristor (6) and is biased by the same voltage supply applied across the thyristor. The FET presents an external gate to cathode resistance which varies in accordance with the changing bias level on the FET, which is the same changing bias applied across the thyristor. The range of variance of this added external resistance must be between 10,000 ohms and 1 megohm. The breakover voltage of the thyristor can be made to vary slowly with respect to temperature, rather than exhibiting sharp drop in a narrow critical temperature region.
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Jaskolski Stanley V.
Lade Robert W.
Schutten Herman P.
Schutten Michael J.
Spellman Gordon B.
Eaton Corporation
Grace C. H.
Union M. L.
Zazworsky John
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