Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1980-10-22
1986-09-23
Clawson, Jr., Joseph E.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 234, 357 38, 357 86, 357 2312, 307252C, H03K 1760
Patent
active
046137661
ABSTRACT:
A thyristor has a semiconductor body which includes first and second base layers contacting one another, an n-emitter layer contacting the first base layer, a first electrode on the n-emitter layer, a p-emitter layer contacting the second base layer, a second electrode on the p-emitter layer, and controllable metal insulator-semiconductor emitter short circuit structures located at at least one boundary surface of the semiconductor body. Each of the short circuit structures includes first and second semiconductor regions of a first conductivity type, the first region contacting the first electrode, and an intermediate third semiconductor region of a second opposite conductivity type between the first and second regions and extending to the boundary surface. An insulated gate is carried over the third region. An emitter layer associated with the metal-insulator-semiconductor structures is divided into a plurality of emitter zones which are respectively provided with portions of the electrode contacting said emitter layer, and the metal-insulator-semiconductor structures are located at the edges of the emitter zones. A common terminal is connected to the insulated gates for receiving a voltage pulse to neutralize the short circuits.
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Clawson Jr. Joseph E.
Siemens Aktiengesellschaft
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