Semiconductor device manufacturing: process – Making regenerative-type switching device
Reexamination Certificate
2009-02-09
2010-12-28
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making regenerative-type switching device
C438S048000, C438S473000
Reexamination Certificate
active
07858449
ABSTRACT:
In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the carbon and/or a bombardment energy and/or an anneal therefore may be selected to establish a low-voltage, leakage characteristic for the junction substantially greater than its leakage absent the carbon. In one embodiment, an anneal of the implanted carbon may be performed in common with an activation for other implant regions the semiconductor device.
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Cho Hyun-Jin
Nemati Farid
Plummer James D.
Robins Scott
Yang Kevin J.
T-RAM Semiconductor, Inc.
The Webostad Firm
Wojciechowicz Edward
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