Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature
Reexamination Certificate
2006-07-11
2006-07-11
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Emitter region feature
C257S156000, C257S297000
Reexamination Certificate
active
07075122
ABSTRACT:
In a method of fabricating a semiconductor memory device, a thyristor may be formed in a layer of semiconductor material. Carbon may be implanted and annealed in a base-emitter junction region for the thyristor to affect leakage characteristics. The density of the carbon and/or a bombardment energy and/or an anneal therefore may be selected to establish a low-voltage, leakage characteristic for the junction substantially greater than its leakage absent the carbon. In one embodiment, an anneal of the implanted carbon may be performed in common with an activation for other implant regions the semiconductor device.
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Cho Hyun-Jin
Nemati Farid
Plummer James D.
Robins Scott
Yang Kevin J.
Fields IP, PS
T-Ram Semiconductor Inc.
Wojciechowicz Edward
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