Thyristor device

Details Thyristor device Thyristor device

1979-06-19

1980-11-25

Clawson, Jr., Joseph E.

357 38, 357 55, 357 58, 357 86, 357 90, H01L 29747

Patent

active

042361699

ABSTRACT:
A semiconductor substrate comprises at the central portion a diode region which includes a P-type base layer, an N-type low impurity concentration layer and an N-type base layer and at the outer peripheral portion a thyristor region which includes an N-type emitter layer, a P-type base layer, an N-type low impurity concentration layer, an N-type base layer and a P-type emitter layer. The P-type base layer and the N-type emitter layer are in contact with a cathode electrode, the N-type base layer and the P-type emitter layer are in contact with an anode electrode, and the diode and thyristor regions are connected in anti-parallel. Contiguous to the outer periphery of the N-type base layer interposed between the N-type low impurity concentration layer and the P-type emitter layer is formed an N-type high impurity concentration region higher in impurity concentration than the N-type base layer. The N-type high impurity concentration region limits spreading of a depletion layer which is created when a forward voltage is applied to the thyristor region.

REFERENCES:
patent: 3538401 (1970-11-01), Chu
patent: 3693054 (1972-09-01), Anderson
patent: 3727116 (1973-04-01), Thomas et al.
patent: 3947864 (1976-03-01), Yatsuo et al.
patent: 3961354 (1976-06-01), Kunasata et al.
patent: 3978514 (1976-08-01), Ogawa et al.
L. Greenberg et al., "ITR-A New Reverse Cond. Thyristor for Horiz. Defl.", RCA Engineer, vol. 19, #3, Oct./Nov. 1973, pp. 86-88.

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