Thyristor circuit and approach for temperature stability

Details Thyristor circuit and approach for temperature stability Thyristor circuit and approach for temperature stability

2007-12-04

2007-12-04

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Lateral structure

C365S180000, C365S212000

Reexamination Certificate

active

10706162

ABSTRACT:
Switching operations, such as those used in memory devices, are enhanced using a semiconductor device having a thyristor adapted to switch between conducting and blocking states and operate at low power. According to an example embodiment of the present invention, thyristor characteristics are managed over a broad temperature range using a control circuit for coupling a signal, such as a DC voltage signal, to a portion of a thyristor for controlling temperature-related operation thereof, e.g., for controlling bipolar gains. In one implementation, a control port adaptively adjusts a signal coupled to the thyristor as a function of temperature, such that at relatively low temperatures unwanted increases in holding current (IH) are prevented. In another implementation, the control port couples the signal at relatively high temperature operation for controlling the forward blocking voltage (VFB) in such a manner that a blocking state of the thyristor is held. In still another implementation, a circuit controller is adapted for applying the signal to the thyristor via the control port as a function of temperature by monitoring operation of a reference thyristor. With these approaches, thyristor operation can be maintained in a relatively stable manner over a broad temperature range.

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Nemati et al, “A Novel Thyristor-based SRAM . . . Memories”, IEDM 1999 pp. 283-286.

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