Thyristor-based SRAM and method for the fabrication thereof

Details Thyristor-based SRAM and method for the fabrication thereof Thyristor-based SRAM and method for the fabrication thereof

2005-02-01

2005-02-01

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S133000, C438S138000

Reexamination Certificate

active

06849481

ABSTRACT:
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a thyristor thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are formed vertically. A gate is formed adjacent at least one of the vertically formed layers. An access transistor is formed on the semiconductor substrate, and an interconnect is formed between the thyristor and the access transistor.

REFERENCES:
patent: 6048738 (2000-04-01), Hsu et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6448586 (2002-09-01), Nemati et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: 6528356 (2003-03-01), Nemati et al.
patent: 6559470 (2003-05-01), Tsu-Jae
patent: 6600173 (2003-07-01), Tiwari
patent: 6653175 (2003-11-01), Nemati et al.
patent: 6653665 (2003-11-01), Kajiyama
patent: 6686612 (2004-02-01), Horch et al.
patent: 6690038 (2004-02-01), Cho et al.
patent: 6713791 (2004-03-01), Hsu et al.
patent: 6727528 (2004-04-01), Robins et al.
patent: 6756612 (2004-06-01), Nemati et al.
patent: 6768166 (2004-07-01), Hagemeyer
patent: 6781888 (2004-08-01), Horch et al.
patent: 6790713 (2004-09-01), Horch

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