Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2006-12-12
2006-12-12
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S350000, C257SE29214, C438S135000
Reexamination Certificate
active
07148522
ABSTRACT:
An integrated circuit structure includes a semiconductor substrate and a thyristor formed thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are formed vertically. A gate is formed adjacent at least one of the vertically formed layers. An access transistor is formed on the semiconductor substrate, and an interconnect is formed between the thyristor and the access transistor.
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Lai Tommy
Li Weining
Quek Elgin
Yelehanka Pradeep Ramachandramurthy
Zheng Jia Zhen
Chartered Semiconductor Manufacturing Ltd.
Ishimaru Mikio
Kraig William
Lee Eugene
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