Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with other solid-state active device in integrated...
Reexamination Certificate
2009-08-10
2010-12-28
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with other solid-state active device in integrated...
C438S133000, C363S027000, C365S094000, C365S104000, C365S105000
Reexamination Certificate
active
07859012
ABSTRACT:
In accordance with an embodiment of the present invention, a semiconductor memory device includes an array of thyristor-based memory formed in a silicon-on-insulator (SOI) supporting substrate. A portion of the supporting structure of the SOI substrate has a density of dopants sufficient to assist delivery of a bias to the backside of an insulating layer beneath a thyristor of the thyristor-based semiconductor memory. By enabling biasing of the substrate at the backside of the insulating layer beneath the thyristor, a back-gate control is available for controlling or compensating the gain of a component bipolar device of the thyristor with respect to temperature.
REFERENCES:
patent: 6888176 (2005-05-01), Horch et al.
Smith Bradley K
T-RAM Semiconductor
The Webostad Firm
Valentine Jami M
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