Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Lateral structure
Reexamination Certificate
2007-09-11
2007-09-11
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Lateral structure
C257SE29221
Reexamination Certificate
active
10947794
ABSTRACT:
A semiconductor may contain a plurality of circuits each comprising at least one thyristor having a base region. The base region of at least one of the thyristors has a different doping profile than the others. When a bias circuit is used to bias the thyristors, the effect of biasing on the thyristors is found to be affected by the doping profile. In a specific embodiment, the doping concentration is higher near an electrode of the thyristor than near a supporting substrate. The different doping profiles can be achieved by using different ion implant energies.
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Gupta Rajesh Narendra
Nemati Farid
Jackson Jerome
T-RAM Semiconductor, Inc.
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