Static information storage and retrieval – Read only systems – Semiconductive
Reexamination Certificate
2005-12-27
2005-12-27
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read only systems
Semiconductive
C257S133000, C257S137000, C257S156000
Reexamination Certificate
active
06980457
ABSTRACT:
A thyristor-based semiconductor device is formed having a thyristor, a pass device and an emitter region buried in a substrate and below at least one other vertically-arranged contiguous region of the thyristor that is at least partially below an upper surface of the substrate. According to an example embodiment of the present invention, a conductor, such as a polysilicon pillar formed in a trench, extends through the substrate and to the buried emitter region of the thyristor. In one implementation, a portion of the conductor includes a reduced-resistance material, such as a salicide, that is adapted to reduce the resistance of an electrical connection made to the buried emitter region via the conductor. This is particularly useful, for example, in connecting the buried emitter region to a power supply at a reduced resistance (e.g., as compared to the resistance that would be exhibited, were the reduced-resistance material not present).
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Horch Andrew
Robins Scott
Elms Richard
Le Toan
T-RAM, Inc.
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