Thyristor and method of manufacture

Details Thyristor and method of manufacture Thyristor and method of manufacture

2008-03-04

2008-03-04

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S115000, C257S157000, C257SE29036, C257SE29037, C438S048000, C438S133000

Reexamination Certificate

active

11317340

ABSTRACT:
A thyristor and a method for manufacturing the thyristor that includes a gate region extending from the first major surface into a semiconductor substrate and an anode region extending from the second major surface into the semiconductor substrate. A cathode region extends into a portion of the gate region. Optionally, enhanced doped regions extend into the gate and anode regions. A mesa structure having a height HGis formed from the first major surface and a mesa structure having a height HAis formed from the second major surface. The gate region extends under the first major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height HG. The anode region extends under the second major surface of the semiconductor substrate and it extends vertically into the semiconductor substrate a distance that is greater than height HA.

REFERENCES:
patent: 5027180 (1991-06-01), Nishizawa et al.
patent: 5281832 (1994-01-01), Clark et al.
patent: 5483087 (1996-01-01), Ajit
patent: 5610434 (1997-03-01), Brogle et al.
patent: 5629535 (1997-05-01), Ajit
patent: 6965131 (2005-11-01), Chang
Fundamental Characteristics of Thyristors, Thyristor Product Catalog, AN1001-1 to -5. Copyrighted 2004. Retrieved from www.littelfuse.com.
Gating, Latching, and Holding of SCRs and Triacs Product Catalog, AN1002-1 to -5. Copyrighted 2004. Retrieved from www.littelfuse.com.

Affiliated with

Also associated with

Rating

Thyristor and method of manufacture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thyristor and method of manufacture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thyristor and method of manufacture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3921311