Thyristor and method of manufacture

Details Thyristor and method of manufacture Thyristor and method of manufacture

2007-04-17

2007-04-17

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With switching speed enhancement means

C257S175000, C257SE29046, C257SE27052, C438S133000

Reexamination Certificate

active

11317213

ABSTRACT:
A thyristor and a method for manufacturing the thyristor that includes providing a semiconductor substrate that has first and second major surfaces. A first doped region is formed in the semiconductor substrate, wherein the first doped extends from the first major surface into the semiconductor substrate. The first doped region has a vertical boundary that has a notched portion. A second doped region is formed in first doped region, wherein the second doped region extends from the first major surface into the first doped region. A third doped region is formed in the semiconductor substrate, wherein the third doped region extends from the second major surface into the semiconductor substrate.

REFERENCES:
patent: 5281832 (1994-01-01), Clark et al.
patent: 5483087 (1996-01-01), Ajit
patent: 5610434 (1997-03-01), Brogle et al.
patent: 5629535 (1997-05-01), Ajit
patent: 6965131 (2005-11-01), Chang
Fundamental Characteristics of Thyristors, Thyristor Product Catalog, AN1001-1 to -5. Copyrighted 2004. Retrieved from www.littelfuse.com.
Gating, Latching, and Holding of SCRs and Triacs Product Catalog, AN1002-1 to -5. Copyrighted 2004. Retrieved from www.littelfuse.com.

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